Details, datasheet, quote on part number: CDDFN10-2574N
PartCDDFN10-2574N
Category
TitleULTRA LOW CAPACITANCE TVS DIODE
Description

Bourns' model CDDFN10-2574N device provides electrostatic discharge (ESD), electrical fast transients (EFT), lightning, and cable discharge event (CDE) protection for high-speed data ports, meeting IEC 61000-4-2 (ESD) requirements. The transient voltage suppressor array, protecting up to four data lines, offers a working peak reverse voltage of 2.5 V and a minimum breakdown voltage of 3 V.



CompanyBourns
DatasheetDownload CDDFN10-2574N datasheet
  
CDDFN10-2574N photo

 

Features, Applications

Features
Applications

General Information The Model CDDFN10-2574N device provides Electrostatic Discharge (ESD), Electrical Fast Transients (EFT), Lightning, and Cable Discharge Event (CDE) protection for high-speed data ports, meeting IEC 61000-4-2 (ESD) requirements. The Transient Voltage Suppressor array, protecting up to four data lines, offers a Working Peak Reverse Voltage 2.5 V and a Minimum Breakdown Voltage 3 V.

The DFN10 packaged device has a low typical capacitance of only 1.7 pF between I/O lines. This allows to be used for protecting sensitive components used on high-speed interfaces. The small footprint of the device allows for flow-through routing on the PCB, helping to maintain matched impedances of the high-speed data lines.

Absolute Maximum Ratings 25 ░C Unless Otherwise Noted)

Parameter Peak Pulse Current (tp 8/20 S) Operating Temperature Storage Temperature Symbol Ipp TOP TSTG to +150 Unit A ║C

Parameter Working Peak Reverse Voltage Breakdown Voltage 1 mA Leakage Current @ VWM Capacitance = 1 MHz (Between I/O Pins) Clamping Voltage Ás @ IPP ESD Protection per IEC 6-1000-4-2 Contact Discharge Air Discharge Symbol VWM VBR IR CIN 1.7 3 Min. Typ. Max. Unit V kV

*RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.

Typical Clamping Voltage vs. Peak Pulse Current

Between I/O Pins Line-to-Line, Two I/O Pins Connected Together on Each Line Waveform Parameters: 20 Ás

V_pulse Pulse from a transmission line 100 ns Between I/O Pins+ TLP_V DUT TLP_I
Line-to-Line, Two I/O Pins Connected Together on Each Line
Transmission Line Pulsing (TLP) Voltage (V) Peak Pulse Current (A)

Specifications are subject to change without notice. The device 13 characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. 12 verify actual device performance in their specific applications. Users should 11 10 Between I/O Pins 9 e (V)

2 mm SMD Trimming Potentiometer CDDFN10-2574N - Surface Mount TVS Diode Array

The Bourns« Model CDDFN10-2574N is designed to protect four high-speed data lines operating at 2.5 volts from system ESD/EFT/Lightning pulses. The use a DFN10 package using a "feed-through" layout provides minimal impedance change on the high-speed data line, while the low capacitance performance of the device limits signal degradation on each channel. Gigabit Ethernet LAN Port

Line 1 In Line 2 In GND Line 3 In Line In 1 GND 3 4 GND 5 6 Line 4 Out GND 8 7 Line 2 Out GND Line 3 Out 10 Line 1 Out

Package = DFN-10 Package Model Designator = 2.5 VRWM (Volts) Suffix N = Low Capacitance

Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.


 

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