Details, datasheet, quote on part number: SP1103C-01UTG
PartSP1103C-01UTG
CategoryCircuit Protection => ESD Suppressors / TVS Diodes => 8837421
TitleESD Suppressors / TVS Diodes 80A 130pF AEC-Q101 TVS DIODES
Description

Littelfuse SP1103C 80A Discrete Bidirectional TVS Diodes are designed to safely absorb repetitive ESD strikes at 30kV (contact discharge, IEC61000-4-2) without performance degradation. These Littelfuse TVS diodes can safely dissipate 80A of 8/20ms surge current (IEC61000-4-5, 2nd edition) with low clamping voltage. SP1103C provides a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These TVS diodes are AEC-Q101 qualified and are ideal for use in switches / buttons, test equipment / instrumentation, point-of-sale terminals, medical equipment, automotive electronics, and more.

CompanyLittelfuse
DatasheetDownload SP1103C-01UTG datasheet
Specifications 
Product CategoryESD Suppressors / TVS Diodes
ManufacturerLittelfuse
SeriesSP11xx
Vesd - Voltage ESD Contact30 kV
Vesd - Voltage ESD Air Gap30 kV
PolarityUnidirectional
Number of Channels1 Channel
Breakdown Voltage-
Clamping Voltage10.9 V
Cd - Diode Capacitance630 pF
Package/CaseDFN-2
Pd - Power Dissipation-
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 125 C
PackagingReel
BrandLittelfuse
Ipp - Peak Pulse Current80 A
Factory Pack Quantity3000
Termination StyleSMD/SMT
Working Voltage6 V
SP1103C-01UTG photo

 

Features, Applications

Description

Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at 30kV (contact and air discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely dissipate of 8/20s surge current (IEC 61000-4-5 2nd edition) with very low clamping voltages.

Features ESD, IEC 61000-4-2, 30kV contact, 30kV air Low clamping voltage Low leakage current Moisture Sensitivity Level (MSL -1) Lead free and RoHS compliant

Test Equipment / Instrumentation Point-of-Sale Terminals Medical Equipment
Notebooks / Desktops / Servers Computer Peripherals Automotive Electronics

Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 04/18/17

Symbol TOP TSTOR Parameter Operating Temperature Storage Temperature Value to 150 Units C

Notes: CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Parameter Reverse Standoff Voltage Reverse Voltage Drop Leakage Current Clamp Voltage1 Dynamic Resistance2 Peak Pulse Current ESD Withstand Voltage1 Diode Capacitance1 Symbol VRWM VR ILEAK VC RDYN Ipp VESD CD Test Conditions IPP=1A, tp=8/20s, Fwd IPP=70A, tP=8/20s, Fwd TLP , tP=100ns, I/O to GND tp=8/20s IEC 61000-4-2 (Contact Discharge) IEC 61000-4-2 (Air Discharge) Reverse Bias=0V, f=1MHz Min Typ Max 5.0 Units kV pF

Parameter Reverse Standoff Voltage Reverse Voltage Drop Leakage Current Clamp Voltage1 Dynamic Resistance Peak Pulse Current ESD Withstand Voltage1 Diode Capacitance1

Test Conditions IPP=40A, tp=8/20s, Fwd IPP=80A, tP=8/20s, Fwd TLP , tP=100ns, I/O to GND tp=8/20s IEC 61000-4-2 (Contact Discharge) IEC 61000-4-2 (Air Discharge) Reverse Bias=0V, f=1MHz

2017 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 04/18/17

Parameter Reverse Standoff Voltage Reverse Voltage Drop Leakage Current Clamp Voltage1 Dynamic Resistance Peak Pulse Current ESD Withstand Voltage1 Diode Capacitance

Symbol VRWM VR ILEAK VC RDYN Ipp VESD CD-GND

Test Conditions IPP=1A, tp=8/20s, Fwd IPP=40A, tP=8/20s, Fwd TLP , tP=100ns, I/O to GND tp=8/20s IEC 61000-4-2 (Contact Discharge) IEC 61000-4-2 (Air Discharge) Reverse Bias=0V, f=1MHz

Parameter Reverse Standoff Voltage Reverse Voltage Drop Leakage Current Clamp Voltage1 Dynamic Resistance2 Peak Pulse Current ESD Withstand Voltage1 Diode Capacitance

Symbol VRWM VR ILEAK VC RDYN Ipp VESD CI/O-GND

Test Conditions IPP=1A, tp=8/20s, Fwd IPP=30A, tp=8/20s, Fwd TLP , tP=100ns, I/O to GND tp=8/20s IEC 61000-4-2 (Contact Discharge) IEC 61000-4-2 (Air Discharge) Reverse Bias=0V, f=1MHz

Note: 1. Parameter is guaranteed by design and/or component characterization. 2.Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t2= 90ns

Test Conditions IPP=1A, tp=8/20s, Fwd IPP=20A, tp=8/20s, Fwd TLP , tP=100ns, I/O to GND tp=8/20s IEC 61000-4-2 (Contact Discharge) IEC 61000-4-2 (Air Discharge) Reverse Bias=0V, f=1MHz


 

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