Details, datasheet, quote on part number: V40PW15CHM3/I
PartV40PW15CHM3/I
Category
TitleDIODE SCHOTTKY 150V 20A SLIMDPAK
Description

Vishay's trench MOS Schottky technology provides low forward voltage drop, low profile heights, and low power losses. The TMBS rectifiers in the SlimDPAK package enable higher current and power efficiency with a unique design that promotes better thermal performance and reliability.



CompanyVishay Semiconductor Diodes Division
DatasheetDownload V40PW15CHM3/I datasheet
  
V40PW15CHM3/I photo

Others parts numbering
V40PW45CHM3/I: DIODE SCHOTTKY 45V 20A SLIMDPAK
V40PW10CHM3/I: DIODE SCHOTTKY 100V 20A SLIMDPAK
V35PWM12HM3/I: DIODE SCHOTTKY 120V 35A SLIMDPAK
V35PW45HM3/I: DIODE SCHOTTKY 45V 35A SLIMDPAK

 

Features, Applications

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES

Very low profile - typical height of 1.3 mm Trench MOS Schottky technology Ideal for automated placement Low forward voltage drop, low power losses

High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak 260 C

AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications.

IF(AV) VRRM IFSM 20 A (TA = 125 C) TJ max. Package Circuit configuration 150 C SlimDPAK (TO-252AE) Common cathode

Case: SlimDPAK (TO-252AE) Molding compound meets 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test

PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode VRRM IF(AV) (1) IF(AV) (1) IFSM TJ (2) TSTG SYMBOL +150 C UNIT

Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction temperature range Storage temperature range

Notes (1) With infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT J JA

Revision: 01-Jun-17 Document Number: 87654 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PARAMETER TEST CONDITIONS 10 A Maximum instantaneous forward voltage 100 V Reverse current 150 V Typical junction capacitance V, 1 MHz VF (1) SYMBOL TYP. MAX. mA V UNIT

Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 5 ms

Notes (1) The heat generated must be less than thermal conductivity from junction-to-ambient: dP /dT JA (2) Free air, mounted on recommended copper pad area; thermal resistance JA - junction to ambient (3) Mounted on infinite heat sink; thermal resistance JM - junction-to-mount

DELIVERY MODE 13" diameter plastic tape and reel 13" diameter plastic tape and reel

Revision: 01-Jun-17 Document Number: 87654 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RATINGS AND CHARACTERISTICS CURVES (TA 25 C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve

Revision: 01-Jun-17 Document Number: 87654 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


 

Some Part number from the same manufacture Vishay Semiconductor Diodes Division
V40PW45CHM3/I

Vishay's trench MOS Schottky technology provides low forward voltage drop, low profile heights, and low power losses. The TMBS rectifiers in the SlimDPAK package enable higher current and power efficiency

V40PW10CHM3/I
V35PWM12HM3/I
V35PW45HM3/I
 
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