Details, datasheet, quote on part number: ZXGD3112N7TC

Diodes Incorporated has extended its family of dedicated active OR'ing MOSFET controllers with the ZXGD3112N7 designed for redundant power supply architectures up to 400 V in telecom, data center, and server duties. The ZXGD3112N7 is designed to fully enhance very low RDS(ON) power MOSFETs. This enables the replacement of a Schottky blocking diode which in turn lowers the operating temperature and increases system integrity. By driving MOSFETs as ‘ideal diodes’ the controller improves the overall system efficiency in high-voltage power systems.

CompanyDiodes, Inc.
DatasheetDownload ZXGD3112N7TC datasheet
ZXGD3112N7TC photo


Features, Applications


The a 400V Active OR-ing MOSFET controller designed for driving a very low RDS(ON) power MOSFET as an ideal diode. This replaces the standard rectifier to reduce the forward voltage drop and overall increase the power transfer efficiency. The ZXGD3112N7 can be used on both high-side and low-side power supply units (PSU) with rails 400V. It enables very low RDS(ON) MOSFETs to operate as ideal diodes as the turn-off threshold is only -3mV with 2mV tolerance. In the typical 48V configuration, the standby power consumption <50mW as the low quiescent supply current is <1mA. During PSU fault condition, the OR-ing Controller detects the power reduction and rapidly turns off the MOSFET <600ns to block reverse current flow and avoid the common bus voltage dropping.


Active OR-ing MOSFET Controller for High- or Low-Side PSU Ideal Diode to Reduce Forward Voltage Drop -3mV Typical Turn-Off Threshold with 2mV Tolerance 400V Drain Voltage Rating 25V VCC Rating <50mW Standby Power with Quiescent Supply Current <1mA <600ns Turn-Off Time to Minimize Reverse Current Totally Lead-Free & Fully RoHS Compliant (Notes & 2) Halogen and Antimony Free. "Green" Device (Note 3)

Case: SO-7 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate)


Active OR-ing Controller in: + 1) Redundant Power Supplies Telecom and Networking Data Centers and Servers

Pin Number 2 3 Pin Name GND VCC GATE Pin Function and Description Ground Connect this pin to the MOSFET source terminal and ground reference point. Power Supply This supply pin should be closely decoupled to ground with a X7R type capacitor. Gate Drive This pin sources (ISOURCE) and sinks (ISINK) current into the MOSFET gate. If VCC > 12V, then the GATE-to-GND will clamp at 12V. The turn on time of the MOSFET can be programmed through an external gate resistor (RG). Power Ground Connect this pin to the MOSFET source terminal and ground reference point. Drain Sense Connect this pin to the MOSFET drain terminal to detect the change in drain-source voltage.

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at

ZXGD = Product Type Marking Code, Line 3112 = Product Type Marking Code, Line YY = Year (ex: WW = Week to 53)

Absolute Maximum Ratings (Voltage relative to GND, +25 C, unless otherwise specified.)

Characteristic Supply Voltage Drain Pin Voltage Gate Output Voltage** Gate Driver Peak Source Current Gate Driver Peak Sink Current **Gate voltage is clamped to 12V. Symbol VCC VD VG ISOURCE ISINK Value -3 to VCC Unit

Thermal Resistance, Junction to Lead Operating and Storage Temperature Range
Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model

5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as Note 5, except pin 3 (VCC) and pins & 6 (PGND) are both connected to separate 5mm 1oz copper heat-sinks. 7. Same as Note 6, except both heat-sinks are 10mm. 8. Same as Note 6, except both heat-sinks are 15mm. 9. Thermal resistance from junction to solder-point at the end of each lead on pins & 3 (GND) and pins & 6 (VCC). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A11.

Characteristic Input Supply Operating Supply Voltage Quiescent Current Drain Low Input current Drain High Input current Gate Driver Gate Peak Source Current Gate Peak Sink Current Gate Peak Source Current (Note 11) Gate Peak Sink Current (Note 11) Detector Under DC Condition Turn-Off Threshold Voltage

VCC +25 C, unless otherwise specified.) Symbol VCC IQ IDL IDH ISOURCE ISINK ISOURCE ISINK VT VG(OFF) VG Min Typ V VG VG(OFF) VG 0.3 Max Unit A mV Test Condition

-0.6V VDRAIN = 47nF VGATE 5V & VDRAIN = -1V VGATE 5V & VDRAIN VG 1V VDRAIN 0mV & VCC = 12V VDRAIN -8mV & VCC = 12V VDRAIN 0mV & VCC = 4V VDRAIN -8mV & VCC = 4V VDRAIN 0mV & VCC = 20V VDRAIN -8mV & VCC = 20V

Load: 50nF capacitor connected in parallel with 50k resistor

Switching Performance Turn-On Propagation Delay Gate Rise Time Turn-Off Propagation Delay Gate Fall Time

= 47nF Rise and Fall Measured to 90% Refer to Application Test Circuit Below
11. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%.


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