Details, datasheet, quote on part number: MAX12931BAWE+
PartMAX12931BAWE+
Category
TitleDGTL ISO 5KV 2CH 16SOIC
Description
CompanyMaxim Integrated Products
DatasheetDownload MAX12931BAWE+ datasheet
  
MAX12931BAWE+ photo

Others parts numbering
MAX12931BWEVKIT: EVAL KIT MAX12931

 

Features, Applications

The MAX12930/MAX12931 are a family 2-channel, 3.75kV/5kVRMS digital galvanic isolators using Maxim's proprietary process technology. These devices transfer digital signals between circuits with different power domains while using as little as 0.65mW per channel at 1Mbps with 1.8V. The two channels of the MAX12931 transfer data in opposite directions, and this makes the MAX12931 ideal for isolating the TX and RX lines of a transceiver. The MAX12930 features two channels transferring data in the same direction. Both devices are available with a maximum data rate of either or 150Mbps and with the default outputs that are either high or low. The default is the state the output assumes when the input is not powered, or if the input is open-circuit. See the Ordering Information for suffixes associated with each option. Independent to 5.5V supplies on each side of the isolator also make the devices suitable for use as level translators. The MAX12930/MAX12931 are available an 8-pin, narrow-body SOIC package. In addition, the MAX12931 is available a 16-pin, wide-body SOIC package. The package material has a minimum comparative tracking index (CTI) of 600V, which gives it a group 1 rating in creepage tables. All devices are rated for operation at ambient temperatures to +125C.

Robust Galvanic Isolation of Digital Signals Withstands 5kVRMS for 60s (VISO) Wide-Body Withstands 3.75kVRMS for 60s (VISO) NarrowBody Continuously Withstands 848VRMS (VIOWM) Wide-Body Continuously Withstands 445VRMS (VIOWM) Narrow-Body Withstands 10kV Surge between GNDA and GNDB with 1.2/50s Waveform High CMTI (50kV/s, typ) Options to Support a Broad Range of Applications 2 Data Rates (25Mbps/150Mbps) 2 Channel Direction Configurations 2 Output Default States (High or Low) Low Power Consumption 1.3mW per Channel at 1Mbps with VDD 3.3V 3.3mW per Channel at 100Mbps with VDD = 1.8V

Applications

Fieldbus Communications for Industrial Automation Isolated RS232, RS-485/RS-422, CAN General Isolation Application Battery Management Medical Systems

VDDA to +6V VDDB to +6V IN_ on SIDE Ato to +6V IN_ on SIDE to +6V OUT_ on SIDE A to GNDA........................ -0.3V to VDDA + 0.3V OUT_on SIDE B to GNDB........................ -0.3V to VDDB + 0.3V Short-Circuit Duration OUT_ on SIDE A to GNDA, OUT_ on SIDE B to GNDB........... Continuous Power Dissipation (TA = +70C) Wide SOIC (derate 14.1mW/C above +70C)....... 1126.8mW Narrow SOIC (derate 13.3mW/C above +70C)......588.2mW Operating Temperature Range.......................... to +125C Maximum Junction Temperature......................................+150C Storage Temperature Range............................. to +150C Soldering Temperature (reflow)........................................+260C

Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Wide SOIC Junction-to-Ambient Thermal Resistance (JA)...........71C/W Junction-to-Case Thermal Resistance (JC)................23C/W Narrow SOIC Junction-to-Ambient Thermal Resistance (JA).........136C/W Junction-to-Case Thermal Resistance (JC)................38C/W

Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.

(VDDA - VGNDA to 5.5V, VDDB - VGNDB to +125C, unless otherwise noted. Typical values are at VDDA - VGNDA = 3.3V, VDDB - VGNDB = 3.3V, GNDA = GNDB, = 25C, unless otherwise noted.) (Note 2) PARAMETER POWER SUPPLY Supply Voltage Undervoltage-Lockout Threshold Undervoltage-Lockout Threshold Hysteresis VDDA VDDB VUVLO_ VUVLO_HYST Relative to GNDA Relative to GNDB VDD_ rising V mV SYMBOL CONDITIONS MIN TYP MAX UNITS

(VDDA - VGNDA to 5.5V, VDDB - VGNDB to +125C, unless otherwise noted. Typical values are at VDDA - VGNDA = 3.3V, VDDB - VGNDB = 3.3V, GNDA = GNDB, = 25C, unless otherwise noted.) (Note 2) PARAMETER SYMBOL CONDITIONS VDDA 5V 1MHz square wave, = 0pF VDDA = 3.3V VDDA = 2.5V VDDA 1.8V 12.5MHz square wave, = 0pF VDDA = 5V VDDA = 3.3V VDDA = 2.5V VDDA 1.8V 50MHz square wave, = 0pF Supply Current (MAX12930_) (Note 3) 1MHz square wave, = 0pF VDDA = 5V VDDA = 3.3V VDDA = 2.5V VDDA = 1.8V VDDB = 5V VDDB = 3.3V VDDB = 2.5V VDDB 1.8V 12.5MHz square wave, = 0pF VDDB = 5V VDDB = 3.3V VDDB = 2.5V VDDB 1.8V 50MHz square wave, = 0pF VDDB = 5V VDDB = 3.3V VDDB = 2.5V VDDB = 1.8V MIN TYP MAX mA UNITS


 

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