Details, datasheet, quote on part number: VS-10CDH06-M3/I
PartVS-10CDH06-M3/I
Category
TitleDIODE GP 600V 2X5A TO-263AC
Description

Vishay's 10 A to 30 A FRED Pt ultrafast recovery rectifiers in the low-profile SMPD (TO-263AC) package combe extremely fast and soft recovery characteristics with low-leakage current and low forward voltage drop. These rectifiers reduce switching losses and over-dissipation in automotive and telecom applications.



CompanyVishay Semiconductor Diodes Division
DatasheetDownload VS-10CDH06-M3/I datasheet
  
VS-10CDH06-M3/I photo

Others parts numbering
VS-20CDH02-M3/I
VS-16CDU06-M3/I: DIODE UFAST REC 600V 16A TO-263A
VS-16CDU06HM3/I
VS-16EDU06-M3/I: DIODE GEN PURP 200V 1A TO263AC
VS-16EDH02-M3/I: DIODE GEN PURP 200V 16A TO263AC
VS-16EDH02HM3/I
VS-16EDU06HM3/I: DIODE GEN PURP 600V 16A TO263AC
VS-30CDU06HM3/I: DIODE GP 600V 2X15A TO-263AC
VS-30CDU06-M3/I
VS-16CDH02-M3/I: DIODE STANDARD 200V 8A TO263AC
VS-12CDU06-M3/I: DIODE UFAST REC 600V 12A TO-263A
VS-20CDH02HM3/I
VS-16CDH02HM3/I: DIODE STANDARD 200V 8A TO263AC
VS-12CDU06HM3/I: DIODE UFAST REC 600V 12A TO-263A

 

Features, Applications

FEATURES
Hyperfast recovery time, reduced Qrr, and soft recovery

175 C maximum operating junction temperature For PFC CRM / CCM, snubber operation Low forward voltage drop

Low leakage current Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Meets JESD 201 class 2 whisker test Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Package IF(AV) at IF trr TJ max. Diode variation TO-263AC (SMPD) 175 C Dual die

State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. These devices are intended for use in PFC, boost, in the AC/DC section of SMPS, freewheeling and clamp diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element and snubbers.

PARAMETER Peak repetitive reverse voltage Average rectified forward current per device per diode per device per diode SYMBOL VRRM IF(AV) IFSM Tsolder pad = 25 C, 6 ms square pulse TEST CONDITIONS VALUES A UNITS V

PARAMETER Breakdown voltage, blocking voltage Forward voltage, per diode SYMBOL VBR, IR CT TEST CONDITIONS = VR rated = 150 C, = VR rated 600 V MIN. 600 TYP. MAX. pF V UNITS

Reverse leakage current, per diode Junction capacitance, per diode

Revision: 10-Feb-15 Document Number: 95808 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DYNAMIC RECOVERY CHARACTERISTICS (TJ 25 C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS 1 A, dIF/dt = 50 A/s, 30 V Reverse recovery time trr 1 A, Irr 125 C Peak recovery current IRRM Qrr 5 A, dIF/dt = 500 A/s, 400 V MIN. TYP. MAX. A ns UNITS

PARAMETER Maximum junction and storage temperature range Thermal resistance, per diode junction to solder pad Approximate weight Marking device Case style TO-263AC (SMPD) SYMBOL TJ, TStg RthJ-Sp TEST CONDITIONS MIN. -55 TYP. 0.02 10CDH06 MAX. +175 3.3 UNITS C C/W g oz.

Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

Revision: 10-Feb-15 Document Number: 95808 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance Junction to Case (C/W)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Note (1) Formula used: (Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = Inverse power loss (1 - D); VR1 = rated VR

Revision: 10-Feb-15 Document Number: 95808 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


 

Some Part number from the same manufacture Vishay Semiconductor Diodes Division
VS-16EDH02HM3/I

Vishay's 10 A to 30 A FRED Pt ultrafast recovery rectifiers in the low-profile SMPD (TO-263AC) package combe extremely fast and soft recovery characteristics with low-leakage current and low forward

VS-16EDH02-M3/I
VS-16EDU06-M3/I
VS-16CDU06HM3/I
VS-16CDU06-M3/I
VS-20CDH02-M3/I
VS-16EDU06HM3/I
VS-30CDU06HM3/I
VS-30CDU06-M3/I
VS-16CDH02-M3/I
VS-12CDU06-M3/I
VS-20CDH02HM3/I
VS-16CDH02HM3/I
VS-12CDU06HM3/I
 
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