|Category||Semiconductors => Discrete Semiconductors => Transistors => MOSFET => 8821521|
|Title||MOSFET MOSFET BVDSS:|
|Datasheet||Download DMP4010SK3Q-13 datasheet
|Number of Channels||1 Channel|
|Vds - Drain-Source Breakdown Voltage||- 40 V|
|Id - Continuous Drain Current||- 50 A|
|Rds On - Drain-Source Resistance||14 mOhms|
|Vgs - Gate-Source Voltage||+/- 25 V|
|Vgs th - Gate-Source Threshold Voltage||- 2.5 V|
|Qg - Gate Charge||91 nC|
|Maximum Operating Temperature||+ 150 C|
|Fall Time||138 ns|
|Minimum Operating Temperature||- 55 C|
|Pd - Power Dissipation||3.3 W|
|Rise Time||10 ns|
|Factory Pack Quantity||2500|
|Transistor Type||1 P-Channel|
|Typical Turn-Off Delay Time||303 ns|
|Typical Turn-On Delay Time||13.2 ns|
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
100% Unclamped Inductive Switch (UIS) Test in Production Low On-Resistance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4)
Case: TO252 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.33 grams (Approximate)Applications
DC-DC Converters Power Management Functions Backlighting
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine 1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
= Manufacturer's Marking. P4010S = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: WW = Week to 53)
Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7), VGS = -10V Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Maximum Body Diode Forward Current (Note 7) Avalanche Current, = 1mH (Note 8) Avalanche Energy, = 1mH (Note 8) Steady State Steady State +70° C Symbol VDSS VGSS ID IDM IS IAS EAS Value Unit mJ
Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Symbol PD RJA PD RJA RJC TJ, TSTG Value to +150 Unit W ° C/W W ° C/W ° C
Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge
Symbol BVDSS IDSS IGSS VGS(TH) RDS(ON) VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. IAS and EAS ratings are based on low frequency and duty cycles to keep C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing.
30.0 25.0 ID, DRAIN CURRENT (A) VGS=-2.5V VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic VGS, GATE-SOURCE VOLTAGE (V) Figure 2.Typical Transfer Characteristic 4 VGS=-3.0V VGS = -10.0V VGS = -5.0V VGS =-4.5V VGS =-4.0V VGS =-3.5V 20 VDS= -5.0V ID, DRAIN CURRENT (A) 16VGS, GATE-SOURCE VOLTAGE (V) Figure 4.Typical Transfer Characteristic 25
Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage
TA ID, DRAIN CURRENT(A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature
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