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Details, datasheet, quote on part number: IPS70R1K4P7SAKMA1
PartIPS70R1K4P7SAKMA1
Category
TitleMOSFET N-CH 700V 8.2A IPAK
Description

Infineon's CoolMOS Power MOSFET product family in 700 V sets a benchmark in superjunction technologies and combines best-in-class performance with state-of-the-art ease-of-use. This is a result of Infineon’s more than two decades of pioneering superjunction MOSFET technology innovations. The 700 V CoolMOS P7 is best enabled for target applications in terms of efficiency and thermals, ease-of-use, and EMI behavior.



CompanyInfineon Technologies Corporation
DatasheetDownload IPS70R1K4P7SAKMA1 datasheet
  
IPS70R1K4P7SAKMA1 photo

Others parts numbering
IPS70R900P7SAKMA1: MOSFET N-CH 700V 12.8A IPAK
IPS70R600P7SAKMA1: MOSFET N-CH 700V 20.5A IPAK
IPA70R600P7SXKSA1: MOSFET N-CH 700V 20.5 TO-220
IPS70R360P7SAKMA1: MOSFET N-CH 700V 34A IPAK
IPA70R360P7SXKSA1: MOSFET N-CH 700V 34A TO-220
IPD70R1K4P7SAUMA1: MOSFET N-CH 700V 8.2A DPAK
IPD70R900P7SAUMA1: MOSFET N-CH 700V 12.8A DPAK
IPD70R600P7SAUMA1: MOSFET N-CH 700V 20.5A DPAK
IPD70R360P7SAUMA1: MOSFET N-CH 700V 34A DPAK

 

Features, Applications

CoolMOSTMisarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOSTMP7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns.

Features
Applications

Parameter VDS @ Tj=25C RDS(on),max Qg,typ ID,pulse Eoss @ 400V V(GS)th,typ ESD class (HBM) Type/OrderingCode IPS70R1K4P7S Value 1C Package PG-TO 251 Marking 70S1K4P7 RelatedLinks see Appendix A Unit J V

Description. 1 Maximum ratings. 3 Thermal characteristics. 3 Electrical characteristics. 4 Electrical characteristics diagrams. 6 Test Circuits. 10 Package Outlines. 11 Appendix A. 12 Revision History. 13 Trademarks. 13 Disclaimer. 13

Parameter Continuous drain current1) Pulsed drain current2) Application (Flyback) relevant avalanche current, single pulse3) MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Continuous diode forward current Diode pulse current

Symbol ID ID,pulse IAS dv/dt VGS Ptot Tj,Tstg IS IS,pulse dv/dt dif/dt VISO

Note/TestCondition 100C TC=25C measured with standard leakage inductance of transformer 5H VDS=0...400V static; AC (f>1 Hz) 25C VDS=0...400V,ISD<=IS,Tj=25C Vrms, TC=25C, t=1min

Maximum diode commutation speed Insulation withstand voltage

Parameter Thermal resistance, junction Symbol RthJC Values Min. Typ. Max. 62 260 Unit Note/TestCondition

C/W leaded C/W n.a. mm (0.063 in.) from case for 10s

Thermal resistance, junction - ambient RthJA Thermal resistance, junction - ambient RthJA for SMD version Soldering temperature, wavesoldering only allowed at leads Tsold

Limited by Tj max. = 20C. Maximum duty cycle D=0.5 Pulse width tp limited by Tj,max 3) Proven during verification test. For explanation please read AN - CoolMOSTM 4) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG


 

Some Part number from the same manufacture Infineon Technologies Corporation
IPS70R900P7SAKMA1

Infineon's CoolMOS Power MOSFET product family in 700 V sets a benchmark in superjunction technologies and combines best-in-class performance with state-of-the-art ease-of-use. This is a result of Infineon’s

IPS70R600P7SAKMA1
IPA70R600P7SXKSA1
IPS70R360P7SAKMA1
IPA70R360P7SXKSA1
IPD70R1K4P7SAUMA1
IPD70R900P7SAUMA1
IPD70R600P7SAUMA1
IPD70R360P7SAUMA1
 
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