Details, datasheet, quote on part number: NTMFS5H409NLT1G
PartNTMFS5H409NLT1G
CategorySemiconductors => Discrete Semiconductors => Transistors => 8821445
TitleMOSFET T8 40V LOW COSS
Description

ON Semiconductor NTMFS5 Power MOSFETs are 40V Single NChannel Power MOSFETs featuring the SO-8FL logic level. The NTMFS5's low on-resistance minimizes conduction losses. The MOSFET's low gate charge and capacitance reduce driver losses. Available in a compact 5x6mm footprint, the NTMFS5 Power MOSFETs are ideal for netcom, telecom, servers, AC adapters, and handheld power tools.

CompanyON Semiconductor
DatasheetDownload NTMFS5H409NLT1G datasheet
Specifications 
TechnologySi
Mounting StyleSMD/SMT
Package/CaseSOIC-8
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current270 A
Rds On - Drain-Source Resistance1.6 mOhms
Vgs - Gate-Source Voltage+/- 20 V
Vgs th - Gate-Source Threshold Voltage1.2 V
Qg - Gate Charge89 nC
Maximum Operating Temperature+ 150 C
PackagingReel
Channel ModeEnhancement
NTMFS5H409NLT1G photo

Others parts numbering
NTMFS5H400NLT1G

 

Features, Applications
Features

Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant

Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 2, 3) Power Dissipation RqJA (Notes & 2) Pulsed Drain Current = 25C Steady State = 25C Steady State 10 ms Symbol VDSS VGS ID Unit V A

Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (IL(pk) 45 A) Lead Temperature for Soldering Purposes (1/8 from case for 10 s)

DFN5 (SO-8FL) CASE 488AA STYLE ZZ 5H409L AYWZZ D = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

Parameter Junction-to-Case - Steady State Junction-to-Ambient - Steady State (Note 2) Symbol RqJC RqJA Value 0.9 39 Unit C/W

See detailed ordering, marking and shipping information section on page 5 of this data sheet.

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface-mounted on FR4 board using mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.

Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS VGS 0 V, VDS = 125C VGS mA V mV/C mA nA Symbol Test Condition Min Typ Max Unit

Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient Drain-to-Source On Resistance

CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Plateau Voltage Output Charge SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS 0.64 59 VGS 0 V, dIS/dt = 100 A/ms, 1.2 V td(ON) tr td(OFF) tf VGS 4.5 V, VDS W ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGP QOSS VGS 0 V, VDS 20 V VGS 4.5 V, VDS 50 A VGS 4.5 V, VDS 50 A VGS 10 V, VDS 50 A VGS = 1 MHz, VDS nC pF

Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures.

RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) 50 A RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) 1.6 1.4
1.8 RDS(on), NORMALIZED DRAIN-TO- SOURCE RESISTANCE VGS 50 A IDSS, LEAKAGE (nA) 1.E+6
Figure 4. On-Resistance vs. Drain Current and Gate Voltage

 

Some Part number from the same manufacture ON Semiconductor
NTMFS5H400NLT1G

ON Semiconductor NTMFS5 Power MOSFETs are 40V Single NChannel Power MOSFETs featuring the SO-8FL logic level. The NTMFS5's low on-resistance minimizes conduction losses. The MOSFET's low gate charge

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