Details, datasheet, quote on part number: QPD1009
PartQPD1009
CategorySemiconductors => Discrete Semiconductors => Transistors => RF Transistors => 8820615
TitleRF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN
Description

Qorvo QPD1009 & QPD1010 GaN RF Transistors are discrete GaN on SiC HEMTs which operate from DC to 4GHz and constructed with Qorvo's proven QGaN25HV process. This process features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization potentially lowers system cost in terms of fewer amplifier line-ups and lower thermal management costs.

CompanyTriQuint Semiconductor
DatasheetDownload QPD1009 datasheet
Specifications 
Transistor TypeHEMT
TechnologyGaN SiC
Gain24 dB
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage50 V
Vgs - Gate-Source Breakdown Voltage145 V
Id - Continuous Drain Current700 mA
Output Power17 W
Maximum Operating Temperature+ 85 C
Pd - Power Dissipation17.5 W
Mounting StyleSMD/SMT
Package/CaseQFN-16
PackagingTray
QPD1009 photo

Others parts numbering
QPD1010: RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN

 

Features, Applications

The Qorvo W (P3dB) discrete GaN on SiC HEMT which operates from to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. 3 x3x0.100mm The device is housed in an industry-standard 3 mm surface mount QFN package. Lead-free and ROHS compliant Evaluation boards are available upon request.

Frequency: to 4 GHz Output Power at 2 GHz Linear Gain: at 2 GHz Typical at 2 GHz Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable 3 mm package

Applications

Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers

Description

Breakdown Voltage,BVDG Gate Voltage Range, VG Drain Current, IDSS Gate Current Range, IG Power Dissipation, CW, PDISS RF Input Power at 2 GHz, CW, 25 C Channel Temperature, TCH Mounting Temperature (30Seconds) Storage Temperature

Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage.

Operating Temp. Range Drain Voltage Range, VD Drain Bias Current, IDQ Drain Current, ID Gate Voltage, VG Channel Temperature (TCH) Power Dissipation, CW (PD)2 Power Dissipation, Pulsed (PD)2, 3

Notes: 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Package C 3. Pulse Width = 128 uS, Duty Cycle = 10%

4 GHz, GaN RF Transistor Pulsed Characterization Load Pull Performance Power Tuned

Frequency, F Linear Gain, GLIN Output Power at 3dB compression point, P3dB Power-Added-Efficiency at 3dB compression point, PAE3dB Gain at 3dB compression point

Test conditions unless otherwise noted: = +50V, IDQ = 26mA, Temp +25 C
Pulsed Characterization Load Pull Performance Efficiency Tuned

Frequency Linear Gain, GLIN Output Power at 3dB compression point, P3dB Power-Added-Efficiency at 3dB compression point, PAE3dB Gain at 3dB compression point, G3dB

Notes: 1. Test conditions unless otherwise noted: = +50V, IDQ = 26mA, Temp +25 C

Linear Gain, GLIN Output Power at 3dB compression point, P3dB Drain Efficiency at 3dB compression point, DEFF3dB Gain at 3dB compression point, G3dB

Test conditions unless otherwise noted: 50 V, IDQ 26 mA Driving input power is determined at pulsed compression under matched condition at EVB output connector.


 

Some Part number from the same manufacture TriQuint Semiconductor
QPD1010

Qorvo QPD1009 & QPD1010 GaN RF Transistors are discrete GaN on SiC HEMTs which operate from DC to 4GHz and constructed with Qorvo's proven QGaN25HV process. This process features advanced field

 
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