|Category||Semiconductors => RF Integrated Circuits => 8820569|
|Title||RF Amplifier 50-4000MHz 3V SiGe Gn 21.1dB -40C +105C|
Qorvo QPA Cascadable SiGe HBT MMIC Amplifiers are high-performance devices featuring a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, QPA SiGe HBT MMIC Amplifiers do not require a dropping resistor as compared to typical Darlington amplifiers. The Qorvo QPA amplifier series is designed for high linearity 3V gain block applications that require small size and minimal external components. These devices are internally matched to 50.
|Datasheet||Download QPA4563CSR datasheet
|Type||HBT MMIC Amplifier|
|Operating Frequency||50 MHz to 4 GHz|
|NF - Noise Figure||2.5 dB|
|P1dB - Compression Point||14.6 dBm|
|OIP3 - Third Order Intercept||26.6 dBm|
|Test Frequency||2.4 GHz|
|Operating Supply Voltage||3 V|
|Operating Supply Current||48 mA|
|Maximum Operating Temperature||+ 105 C|
|Others parts numbering|
|QPA2363CSR: RF Amplifier 50-4000MHz 3V SiGe Gn 12dB -40C +105C|
|QPA4263CSR: RF Amplifier 50-4000MHz 3V SiGe Gn 14dB -40C +105C|
|QPA4363CSR: RF Amplifier 50-4000MHz 3V SiGe Gn 13.6dB -40C +105C|
RFMD's is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the QPA4563C does not require a dropping resistor as compared to typical Darlington amplifiers. The QPA4563C is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50.
Single Fixed 3V Supply No Dropping Resistor Required Patented Self-Bias Circuitry at 1950MHz Robust 1000V ESD, Class 1C HBMApplications
Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite
3000 pieces a 7" reel (standard) 25 Piece Sample Bag 100 Pieces on 7" Reel
Data Sheet Rev.A, July 2016 | Subject to change without notice
Parameter Storage Temp Device Voltage (VD) Device Current (ID) RF Input Power(1) Rating mA +12 dBm
Parameter Min Operating Temperature -40 Junction Temperature (TJ) Device Operating Voltage Typ Max +105 +125 Units °C V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Notes: to 10:1 VSWR
Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions.
Parameter Small Signal Gain Conditions 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 2400 MHz 1950 MHz 1950 MHz 1950 MHz Min Typ Max Units dB dBm dB mA °C/W
Output Third Intercept Point Input Return Loss Output Return Loss Noise Figure Device Operating Current Thermal Resistance, jc
Notes: 1. Test conditions unless otherwise noted: = 48mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone 0dBm, 50 system, Temp=+25°CData Sheet Rev.A, July 2016 | Subject to change without notice
PCB, QPA4563C CAP, X7R, 1206 CAP, X7R, 0402 CAP, C0G, 0402 CAP, C0G, 0402 RES, , 1210 IND, 5%, M/L, 0603 CONN, SMA, EL, FLT, 0.068" SPE-000318 HBT MMIC Amplifier CONN, HDR, ST, 1x2, 0.100", Hi-temp, T/H
Qorvo Murata Electronics Murata Electronics Murata Electronics Murata Electronics KOA Speer Electronics Murata Electronics Amphenol RF Asia Corp Qorvo Samtec IncData Sheet Rev.A, July 2016 | Subject to change without notice
|Some Part number from the same manufacture TriQuint Semiconductor|
Qorvo QPA Cascadable SiGe HBT MMIC Amplifiers are high-performance devices featuring a Darlington configuration with an active bias network. The active bias network provides stable current over temperature
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